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A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power

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GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

Xubo Song, Shixiong Liang, Yuanjie Lv, Zhenpeng Zhang, Lisen Zhang, Xingchang Fu, Yanmin Guo, Guodong Gu, Yuangang Wang, Yuan Fang, Aimin Bu, Shujun Cai and Zhihong Feng
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A New Generation of Room-Temperature Frequency-Multiplied Sources With up to 10× Higher Output Power in the 160-GHz–1.6-THz Range

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High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

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